Millimeter wave noise parameter measurements
Product No.: ML-10500
MilliLab offers noise parameter test facility for both on-wafer and packaged device measurements. Two measurement setups have been developed one for V-band (50-75 GHz) and one for W-band (75-110 GHz). Noise parameters ca be measured as a function of frequency or bias conditions. Measurement systems are based on commonly used cold-cource method and noise parameters are determined from measured noise figure vs. source impedance data.
Figure 1. Setup for on-wafer noise parameter measurements at 50-75 GHz
To demonstrate measurement capability of the measurement systems, measured minimum noise figure, associated gain, and optimum source reflection coefficient of an InP HEMT device are shown in figures 2 and 3. In these measurements the frequency range was limited to 100 GHz due to mixer used in the noise receiver. Data between 75-80 GHz was errorneous due to unsuccesful calibration.
Figure 2. Example of a minimum noise figure and associated gain measured for a HEMT device.
Figure 3. Example of a optimum source reflection coefficient measured for a HEMT device.
As an example, measured noise parameters of an InP HEMT and related uncertaintities
at single frequency are presented in the table 1. Error boundaries depends
heavily on the test device. Uncertaintity boundary ±
0.5 dB in minimum noise figure with 95 % confidence level is easily obtained.
Table 1. Noise parameters and uncertaintity boundaries for an InP HEMT
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Customer's needs considering measurements are strongly noticed. For further information about current delivery time status and device requirement, contact Director of MilliLab.
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